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| CMPT8099 NPN CMPT8599 PNP COMPLEMENTARY SILICON TRANSISTOR Central Semiconductor DESCRIPTION: TM Corp. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg Q JA The CENTRAL SEMICONDUCTOR CMPT8099, CMPT8599 types are Complementary Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose audio amplifier applications. Marking Codes are CKB and C2W Respectively. Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance CMPT8099 80 80 6.0 500 350 CMPT8599 80 80 5.0 UNITS V V V mA mW oC oC/W -65 to +150 357 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) CMPT8099 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=80V 0.1 IEBO VBE=6.0V 0.1 IEBO VBE=4.0V BVCBO IC=100mA 80 BVCEO IC=10mA 80 BVEBO IE=10mA 6.0 VCE(SAT) IC=100mA, IB=5.0mA 0.4 VCE(SAT) IC=100mA, IB=10mA 0.3 VBE(ON) VCE=5.0V, IC=10mA 0.6 0.8 hFE VCE=5.0V, IC=1.0mA 100 300 hFE VCE=5.0V, IC=10mA 100 CMPT8599 MIN MAX UNITS 0.1 mA mA 0.1 mA 80 V 80 V 5.0 V 0.4 V 0.3 V 0.6 0.8 V 100 300 100 194 SYMBOL hFE fT Cob Cib TEST CONDITIONS VCE=5.0V, IC=100mA VCE=5.0V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz CMPT8099 MIN MAX 75 150 6.0 25 CMPT8599 MIN MAX UNITS 75 150 MHz 4.5 pF 30 pF All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 195 |
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